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TOSHIBA BG4 SERIES 256GB M.2 BICS4 SSD

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  • KIOXIA’s 96-layer BiCS FLASH™
  • PCIe® Gen3 x4, NVMe™
  • Capacities up to 1,024GB
  • M.2 1620 single package and M.2 2230 single-sided form factor
  • TCG OPAL 2.01 Optional for SED
Applications
  • Ultra-mobile PCs
  • 2-in-1 notebook PCs
  • IoT/embedded devices
  • Server and storage array boot drives

Toshiba

The BG4 series is a line-up of compact single package NVMe™ SSDs with capacities up to 1,024GB, and leverages a PCIe® Gen3 x4 interface and KIOXIA’s 96-layer TLC BiCS FLASH™. With higher bandwidth and improved flash management and Host Memory Buffer (HMB) technology, BG4 SSDs deliver best-in-class read performance in single package SSDs, of up to 2,300MB/s (sequential read) and up to 390K IOPS (random read), with active power consumption of up to 3.7W (Typ.).

The BG4 series is available in four capacities of 128GB, 256GB, 512GB and 1,024GB in surface-mount M.2 1620 single package or removable M.2 2230 module form factor options, making them suitable for thin and light system designs for ultra-thin PCs, as well as embedded devices and server boot in data centers.

The BG4 series is with the option of a Self-Encrypting Drive (SED) model supporting TCG Opal Version 2.01.

SKU: KBG40ZNS256G Categories: , ,

Brand

Toshiba

Product Description KIOXIA BG4 Series KBG40ZNS256G – solid state drive – 256 GB – PCI Express 3.0 x4 (NVMe)
Type Solid state drive – internal
Capacity 256 GB
NAND Flash Memory Type 3D triple-level cell (TLC)
Form Factor M.2 2230
Interface PCI Express 3.0 x4 (NVMe)
Features SLC cache, Host Memory Buffer (HMB), 96-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3b
Dimensions (WxDxH) 22 mm x 30 mm x 2.23 mm
Weight 2.5 g
General
Device Type Solid state drive – internal
Capacity 256 GB
NAND Flash Memory Type 3D triple-level cell (TLC)
Form Factor M.2 2230
Interface PCI Express 3.0 x4 (NVMe)
Features SLC cache, Host Memory Buffer (HMB), 96-layer 3D BiCS FLASH, NVM Express (NVMe) 1.3b
Width 22 mm
Depth 30 mm
Height 2.23 mm
Weight 2.5 g
Performance
Internal Data Rate 2200 MBps (read) / 1400 MBps (write)
4KB Random Read 330000 IOPS
4KB Random Write 190000 IOPS
Reliability
MTBF 1,500,000 hours
Expansion & Connectivity
Interfaces 1 x PCI Express 3.0 x4 (NVMe) – M.2 Card
Compatible Bay M.2 2230
Power
Power Consumption 3.6 Watt (active)
5 mW (L1.2 mode)
Environmental Parameters
Min Operating Temperature 0 °C
Max Operating Temperature 85 °C
Min Storage Temperature -40 °C
Max Storage Temperature 85 °C
Humidity Range Operating 8 – 90%
Shock Tolerance (operating) 1500 g @ 0.5 ms
Shock Tolerance (non-operating) 1500 g @ 0.5 ms
Vibration Tolerance (operating) 20 g @ 10-2000 Hz
Vibration Tolerance (non-operating) 20 g @ 10-2000 Hz

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